Title :
Modelling the limits of low voltage operation for the GaAs multiple quantum well asymmetric Fabry-Perot cavity modulator
Author :
Whitehead, Mark ; Parry, Gareth
Author_Institution :
Dept. of Electron. Eng., Univ. Coll. London, UK
Abstract :
It is shown using a simple but effective model that contrast of ≈10 dB is possible with GaAs AFPMs at operating voltages in the 3-5 V range. The associated insertion losses can still be as low as 3-4 dB and absolute reflection changes greater than 50%. Because of the low finesse of the AFPM, modulation linewidths are comparable with non-resonant MQW modulators
Keywords :
III-V semiconductors; cavity resonators; electro-optical devices; gallium arsenide; optical modulation; semiconductor quantum wells; 3 to 4 dB; 3 to 5 V; GaAs; GaAs multiple quantum well asymmetric Fabry-Perot cavity modulator; III-V semiconductor; absolute reflection changes; insertion losses; low finesse; low voltage operation limits; modelling; modulation linewidths;
Conference_Titel :
Modelling of Optoelectronic Devices, IEE Colloquium on
Conference_Location :
London
