Title :
Modelling of asymmetrical Fabry-Perot modulators in InGaAs/InP
Author :
Robbins, D.J. ; Tipping, A.K.
Author_Institution :
Plessey Res. Caswell Ltd., Towcester, UK
Abstract :
Quantum well modulators which exploit the quantum confined Stark shift of the excitonic absorption edge to modulate light propagating through the quantum wells are of considerable interest for applications in optical interconnects. Modelling of an AFPM realised in InGaAs/InP is discussed for application in a free space optical interconnect demonstrator designed for operation at ~1.55 μm, and a schematic cross-section of the flip-chip InGaAs/InP reflective modulator is shown for a single element
Keywords :
III-V semiconductors; electro-optical devices; gallium arsenide; indium compounds; optical interconnections; optical modulation; 1.55 micron; III-V semiconductor; InGaAs-InP; asymmetrical Fabry-Perot modulators; excitonic absorption edge; flip-chip InGaAs/InP reflective modulator; free space optical interconnect demonstrator; modelling; quantum confined Stark shift; quantum well modulators;
Conference_Titel :
Modelling of Optoelectronic Devices, IEE Colloquium on
Conference_Location :
London
