Title :
Accurate modelling of quantum well laser threshold currents
Author :
Kucharska, A.I. ; Blood, P. ; Fletcher, E.D. ; Jacobs, J.P.
Author_Institution :
Philips Res. Labs., Redhill, UK
Abstract :
The authors have developed a computer model of the local gain and spontaneous emission characteristics of quantum wells and have used their model to calculate threshold characteristics of quantum well lasers. The model incorporates a first-principles model of lifetime broadening and also non-radiative recombination in the barriers. The results of the calculations are in excellent agreement with experimental observations for quantum well lasers with different numbers of 60 Å GaAs wells, different cavity lengths and over a wide temperature range. Finally, since the model is based on general physical principles, it may readily be extended to material systems other than GaAs-AlGaAs
Keywords :
laser theory; radiative lifetimes; semiconductor device models; semiconductor junction lasers; 60 A; GaAs-AlGaAs; III-V semiconductor; cavity lengths; computer model; first-principles model; lifetime broadening; local gain; nonradiative recombination; quantum well laser threshold currents; spontaneous emission characteristics; threshold characteristics; wide temperature range;
Conference_Titel :
Modelling of Optoelectronic Devices, IEE Colloquium on
Conference_Location :
London
