A 10 μm thick poly-SiGe gyroscope processed above 0.35 μm CMOS

Author

Scheurle, A. ; Fuchs, T. ; Kehr, K. ; Leinenbach, C. ; Kronmüller, S. ; Arias, A. ; Ceballos, J. ; Lagos, M.A. ; Mora, J.M. ; Muñoz, J.M. ; Ragel, A. ; Ramos, J. ; Aerde, S. Van ; Spengler, J. ; Mehta, A. ; Verbist, A. ; Bois, B. Du ; Witvrouw, A.

Author_Institution

Bosch, Gerlingen

fYear

2007

fDate

21-25 Jan. 2007

Firstpage

39

Lastpage

42

Abstract

This paper describes a monolithically integrated omega_z-gyroscope fabricated in a surface-micromaching technology. As functional structure, a 10 mum thick Silicon-Germanium layer is processed above a standard high voltage 0.35 mum CMOS-ASIC. Drive and Sense of the in plane double wing gyroscope is fully capacitively. Measurement of movement is also done fully capacitively in continuous-time baseband sensing. For characterization, the gyroscope chip is mounted on a breadboard with auxiliary circuits. A noise floor of 0.01 degs/sqrt(Hz) for operation at 3 mBar is achieved.

Keywords

CMOS integrated circuits; Ge-Si alloys; application specific integrated circuits; gyroscopes; micromachining; CMOS-ASIC; poly-SiGe gyroscope; size 10 mum; surface-micromaching technology; Baseband; CMOS process; CMOS technology; Germanium silicon alloys; Gyroscopes; Integrated circuit measurements; Motion measurement; Semiconductor device measurement; Silicon germanium; Voltage; CMOS; Gyroscope; Monolithic Integration; SiGe; Silicon-Germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2007. MEMS. IEEE 20th International Conference on

Conference_Location

Hyogo

ISSN

1084-6999

Print_ISBN

978-1-4244-095-5

Electronic_ISBN

1084-6999

Type

conf

DOI

10.1109/MEMSYS.2007.4433007

Filename

4433007