DocumentCode
279793
Title
Semiconductor optoelectronic materials
Author
Ritchie, Simon
Author_Institution
British Telecom Res., Ipswich, UK
fYear
1990
fDate
32923
Firstpage
411
Lastpage
413
Abstract
The author reviews semiconductor materials for optoelectronic devices, with special emphasis on the use of III-V semiconductor materials such as gallium arsenide and indium phosphide for light emission, and the new possibilities emerging from the use of bandgap engineering concepts, especially multiquantum wells and superlattices
Keywords
III-V semiconductors; energy gap; gallium arsenide; indium compounds; optical materials; reviews; semiconductor quantum wells; semiconductor superlattices; GaAs; III-V semiconductor; InP; bandgap engineering concepts; light emission; multiquantum wells; semiconductor optical materials; superlattices;
fLanguage
English
Publisher
iet
Conference_Titel
Optoelectronic Materials, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
189835
Link To Document