DocumentCode :
2797994
Title :
A new algorithm for transforming exponential current ramp breakdown distributions into constant current TDDB space, and the implications for gate oxide Q/sub BD/ measurement methods
Author :
Dumin, Nels A.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fYear :
1998
fDate :
March 31 1998-April 2 1998
Firstpage :
80
Lastpage :
86
Abstract :
Charge-to-breakdown (Q/sub BD/) is one of the manufacturing parameters that is used as a measure of oxide quality. In this work, the influence of the measurement conditions on Q/sub BD/ is examined, as well as the relationship between Q/sub BD/ and oxide thickness. Using oxides ranging from 45 /spl Aring/ to 80 /spl Aring/, two Q/sub BD/ measurement methods are employed: constant current stress (CCS) and an exponential current ramp (ECR). A variety of current densities (for constant current stress) and step durations (for exponential current ramp) are studied. It is shown that not only does Q/sub BD/ depend on oxide thickness, but that Q/sub BD/ depends strongly on the measurement conditions, and that, depending on the test conditions, Q/sub BD/ can increase or decrease as the oxide thickness decreases. It is also shown that there is a strong agreement between the Q/sub BD/ measured with a constant current stress and the Q/sub BD/ measured with an exponential current ramp. Finally, an algorithm is proposed for transforming the Q/sub BD/ distribution obtained from a series of exponential current ramps into the Q/sub BD/ and/or t/sub BD/ domains of constant current stressing.
Keywords :
current density; dielectric thin films; electric breakdown; integrated circuit measurement; integrated circuit yield; production testing; quality control; 45 to 80 angstrom; Si; SiO/sub 2/-Si; charge-to-breakdown; charge-to-breakdown domain; constant current TDDB space; constant current stress testing; current density; current ramp step duration; exponential current ramp breakdown distribution transform algorithm; exponential current ramp series; exponential current ramp testing; gate oxide Q/sub BD/ measurement methods; manufacturing parameters; measurement conditions; oxide quality; oxide thickness; time-to-breakdown domain; Carbon capture and storage; Current density; Current measurement; Density measurement; Design for quality; Electric breakdown; Instruments; Manufacturing; Stress measurement; Thickness measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International
Conference_Location :
Reno, NV, USA
Print_ISBN :
0-7803-4400-6
Type :
conf
DOI :
10.1109/RELPHY.1998.670448
Filename :
670448
Link To Document :
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