DocumentCode :
2797995
Title :
Characterization of a high gain BJT used in power conversion on AC mains
Author :
Benboujema, C. ; Jacques, S. ; Schellmanns, A. ; Batut, N. ; Quoirin, J.-B. ; Ventura, L.
Author_Institution :
Lab. de Microelectron. de Puissance” (LMP), Tours Univ., Tours, France
fYear :
2010
fDate :
12-16 Sept. 2010
Firstpage :
357
Lastpage :
361
Abstract :
Nowadays, the existing power devices (thyristors, Triacs, ...) used to drive usual AC loads (e.g. washing machines, dimmers, ...) are quite limited: no turn-off drive, small scale integration and high thermal dissipation. Within this framework, new architectures have to be developed. This paper summarizes the first results of the electrical characterization of a new high gain low loss 600V bipolar transistor. The static performances of our new bipolar transistor are compared with those obtained using some electrical simulations (Sentaurus). Combining two of these devices, we should be able to develop a new generation of AC power devices.
Keywords :
bipolar transistors; power conversion; AC loads; AC power devices; bipolar transistor; electrical characterization; electrical simulations; high gain BJT; power conversion; voltage 600 V; Bipolar transistors; Current measurement; Integrated circuits; Performance evaluation; Switches; Thyristors; Transistors; AC-AC power conversion; bipolar transistors; electronic switching systems; low losses; semiconductor device manufacturing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2010 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-5286-6
Electronic_ISBN :
978-1-4244-5287-3
Type :
conf
DOI :
10.1109/ECCE.2010.5618012
Filename :
5618012
Link To Document :
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