Title :
The correlation of highly accelerated Q/sub bd/ tests to TDDB life tests for ultra-thin gate oxides
Author :
Chen, Yuan ; Suehle, John S. ; Shen, Chih-Chieh ; Bernstein, Joseph ; Messick, Cleston ; Chaparala, Prasad
Author_Institution :
Center for Reliability Eng., Maryland Univ., College Park, MD, USA
fDate :
March 31 1998-April 2 1998
Abstract :
A new technique is proposed to extract long-term constant voltage stress time-dependent dielectric breakdown (TDDB) acceleration parameters from highly accelerated constant or ramped current injection breakdown tests. It is demonstrated that an accurate correlation of highly accelerated breakdown tests to long-term constant voltage TDDB tests can be obtained.
Keywords :
dielectric thin films; electric breakdown; integrated circuit reliability; integrated circuit testing; life testing; Si; SiO/sub 2/-Si; TDDB acceleration parameters; TDDB life tests; constant voltage stress time-dependent dielectric breakdown; highly accelerated Q/sub bd/ tests; highly accelerated breakdown tests; highly accelerated charge-to-breakdown tests; highly accelerated constant current injection breakdown tests; long-term constant voltage TDDB tests; ramped current injection breakdown tests; ultra-thin gate oxides; Acceleration; Breakdown voltage; Design for quality; Dielectric breakdown; Electric breakdown; Equations; Life estimation; Life testing; Stress; Temperature;
Conference_Titel :
Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International
Conference_Location :
Reno, NV, USA
Print_ISBN :
0-7803-4400-6
DOI :
10.1109/RELPHY.1998.670449
