DocumentCode :
2798133
Title :
Crystal growth, new structures and integration
Author :
Suematsu, Y.
Author_Institution :
Tokyo Institute of Technology
fYear :
1990
fDate :
9-14 Sept. 1990
Firstpage :
2
Lastpage :
6
Keywords :
Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Laser tuning; Molecular beam epitaxial growth; Optical materials; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
Conference_Location :
Davos, Switzerland
Type :
conf
DOI :
10.1109/ISLC.1990.764406
Filename :
764406
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2798133
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