• DocumentCode
    2798133
  • Title

    Crystal growth, new structures and integration

  • Author

    Suematsu, Y.

  • Author_Institution
    Tokyo Institute of Technology
  • fYear
    1990
  • fDate
    9-14 Sept. 1990
  • Firstpage
    2
  • Lastpage
    6
  • Keywords
    Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Laser tuning; Molecular beam epitaxial growth; Optical materials; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
  • Conference_Location
    Davos, Switzerland
  • Type

    conf

  • DOI
    10.1109/ISLC.1990.764406
  • Filename
    764406
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2798133