Analytical investigation of reflections from single GaAs-GaAlAs multiple quantum well (MQW)

Author

Jian-Guo Ma ; Zhizhang Chen

Author_Institution

Dept. of Electr. Eng., Tech. Univ. of Nova Scotia, Halifax, NS, Canada

Volume

4

fYear

1997

fDate

13-18 July 1997

Firstpage

2320

Abstract

Reflections of normal incident electromagnetic waves from nonlinear GaAsAlAs MQW layer are investigated analytically by using the perturbation technique. The results illustrate the reflectivity as a strong function of incident wave amplitude. Unlike linear cases, there are two sets of solutions in MOW for given incident wave amplitude, reflectivity and the nonlinearity.

Keywords

III-V semiconductors; aluminium compounds; electromagnetic wave reflection; gallium arsenide; gallium compounds; perturbation techniques; semiconductor quantum wells; GaAs-GaAlAs; III-V semiconductors; analytical investigation; incident wave amplitude; multiple quantum well; nonlinear MQW layer; nonlinearity; normal incident electromagnetic waves; perturbation technique; reflections; reflectivity; Electromagnetic analysis; Electromagnetic reflection; Electromagnetic scattering; Optical reflection; Optical signal processing; Perturbation methods; Quantum well devices; Reflectivity; Refractive index; Slabs;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation Society International Symposium, 1997. IEEE., 1997 Digest

Conference_Location

Montreal, Quebec, Canada

Print_ISBN

0-7803-4178-3

Type

conf

DOI

10.1109/APS.1997.625434

Filename

625434