Title :
Analytical investigation of reflections from single GaAs-GaAlAs multiple quantum well (MQW)
Author :
Jian-Guo Ma ; Zhizhang Chen
Author_Institution :
Dept. of Electr. Eng., Tech. Univ. of Nova Scotia, Halifax, NS, Canada
Abstract :
Reflections of normal incident electromagnetic waves from nonlinear GaAsAlAs MQW layer are investigated analytically by using the perturbation technique. The results illustrate the reflectivity as a strong function of incident wave amplitude. Unlike linear cases, there are two sets of solutions in MOW for given incident wave amplitude, reflectivity and the nonlinearity.
Keywords :
III-V semiconductors; aluminium compounds; electromagnetic wave reflection; gallium arsenide; gallium compounds; perturbation techniques; semiconductor quantum wells; GaAs-GaAlAs; III-V semiconductors; analytical investigation; incident wave amplitude; multiple quantum well; nonlinear MQW layer; nonlinearity; normal incident electromagnetic waves; perturbation technique; reflections; reflectivity; Electromagnetic analysis; Electromagnetic reflection; Electromagnetic scattering; Optical reflection; Optical signal processing; Perturbation methods; Quantum well devices; Reflectivity; Refractive index; Slabs;
Conference_Titel :
Antennas and Propagation Society International Symposium, 1997. IEEE., 1997 Digest
Conference_Location :
Montreal, Quebec, Canada
Print_ISBN :
0-7803-4178-3
DOI :
10.1109/APS.1997.625434
