Title :
633 nm CW operation of GaInP/AlGaInP laser-diodes
Author :
Valster, A. ; Liedenbaum, C.T.H.F. ; v.d.Heijden, J.M.M. ; Finke, M.N. ; Severens, A.L.G. ; Boermans, M.J.B.
Author_Institution :
Philips Research Laboratories
Keywords :
Epitaxial growth; Gallium arsenide; Gas lasers; III-V semiconductor materials; Laboratories; Optical recording; Quantum well devices; Quantum well lasers; Semiconductor lasers; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
Conference_Location :
Davos, Switzerland
DOI :
10.1109/ISLC.1990.764413
