Title :
Radiation hard GaAs microwave integrated circuits design
Author :
Gromov, D.V. ; Maltcev, P.P. ; Nikiforov, A.Y. ; Polevich, S.A. ; Startcev, S.A.
Author_Institution :
Specialized Electron. Syst., Moscow, Russia
Abstract :
The radiation hard microwave integrated circuits (MIC) design technique is presented. The approach is based on the microstrip lines optimization procedure taking into consideration MESFET S-parameters radiation variation. The technique efficiency is demonstrated for MIC amplifier
Keywords :
III-V semiconductors; MESFET integrated circuits; S-parameters; gallium arsenide; integrated circuit design; microstrip circuits; microwave amplifiers; microwave integrated circuits; radiation hardening (electronics); GaAs; GaAs microwave integrated circuit; MESFET; MIC amplifier; S-parameters; microstrip line optimization; radiation hard design; Circuit topology; Degradation; Design optimization; Gallium arsenide; Impedance; MESFETs; Microstrip; Microwave integrated circuits; Scattering parameters; Structural engineering;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location :
Cannes
Print_ISBN :
0-7803-4071-X
DOI :
10.1109/RADECS.1997.698873
