DocumentCode :
2798328
Title :
High power CW operation of aluminium-free InGaAs/GaAs/InGaP strained layer single quantum well ridge waveguide lasers
Author :
Ijichi, T. ; Ohkubo, M. ; Matsumoto, N. ; Okamoto, H.
Author_Institution :
Furukawa Electric Corporation
fYear :
1990
fDate :
9-14 Sept. 1990
Firstpage :
44
Lastpage :
45
Keywords :
Chemical lasers; Etching; Gallium arsenide; Indium gallium arsenide; MOCVD; Power lasers; Quantum well lasers; Surface emitting lasers; Threshold current; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
Conference_Location :
Davos, Switzerland
Type :
conf
DOI :
10.1109/ISLC.1990.764420
Filename :
764420
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2798328
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