Annealing effects and optical properties of Si: SiO2 films prepared by radio frequency sputter

Author

Tanaka, Kiyoshi ; Happo, N. ; Fujiwara, Masamichi

Author_Institution

Hiroshima City Univ., Hiroshima, Japan

Volume

1

fYear

2012

fDate

15-17 Oct. 2012

Firstpage

171

Lastpage

174

Abstract

We fabricated Si: SiO₂ films and assessed its optical characteristics using photoluminescence spectroscopy. The Si: SiO₂ films were deposited by sputtering Si tablets (15 mm square) onto a SiO₂ target (108 mm diameter). Using excitation by a He-Cd laser, photoluminescence was emitted from the films. The bluish color emission was seen by the naked eye at room temperature. Photoluminescence spectra, that were measured from 400 nm to 1100 nm, were wide and continuous with some peaks. After annealing, that emission of photoluminescence decreased and its color changed to red.

Keywords

annealing; elemental semiconductors; photoluminescence; semiconductor thin films; silicon; silicon compounds; sputter deposition; He-Cd laser excitation; Si:SiO₂; annealing; bluish color emission; optical properties; photoluminescence spectroscopy; radiofrequency sputter; size 108 mm; size 15 mm; temperature 293 K to 298 K; thin films; wavelength 400 nm to 1100 nm; Absorption; Annealing; Films; Measurement by laser beam; Photoluminescence; Silicon; Temperature measurement; FT-IR; Si: SiO2 films; photoluminescence; silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2012 International

Conference_Location

Sinaia

ISSN

1545-857X

Print_ISBN

978-1-4673-0737-6

Type

conf

DOI

10.1109/SMICND.2012.6400663

Filename

6400663