Schottky barrier contact-based RF MEMS switch

This paper presents the design, fabrication and measurement results for a novel Schottky barrier contact-based RF MEMS switch. This Schottky barrier contact allows one to operate the RF MEMS switch in a traditional capacitive mode when it is reverse biased, but can also conduct current in a forward biased state. Forward biasing the switch recombines trapped charges, thus extending the lifetime of the switch. This work intimately combines MEMS processing with solid-state electronics to produce a truly unique RF device. To the author´s knowledge, nothing similar to this work has ever been reported.