Title :
High gain strained-layer InGaAs/InGaAsP MQW laser amplifiers
Author :
Tiemeijer, L.F. ; Thijs, P.J.A. ; Dongen, T.v. ; Binsma, J.J.M.
Author_Institution :
Philips Research Laboratories
Keywords :
Epitaxial layers; Gain; High power amplifiers; Indium gallium arsenide; Power amplifiers; Power generation; Power lasers; Quantum well devices; Quantum well lasers; Spontaneous emission;
Conference_Titel :
Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
Conference_Location :
Davos, Switzerland
DOI :
10.1109/ISLC.1990.764424
