• DocumentCode
    2798382
  • Title

    High gain strained-layer InGaAs/InGaAsP MQW laser amplifiers

  • Author

    Tiemeijer, L.F. ; Thijs, P.J.A. ; Dongen, T.v. ; Binsma, J.J.M.

  • Author_Institution
    Philips Research Laboratories
  • fYear
    1990
  • fDate
    9-14 Sept. 1990
  • Firstpage
    52
  • Lastpage
    53
  • Keywords
    Epitaxial layers; Gain; High power amplifiers; Indium gallium arsenide; Power amplifiers; Power generation; Power lasers; Quantum well devices; Quantum well lasers; Spontaneous emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
  • Conference_Location
    Davos, Switzerland
  • Type

    conf

  • DOI
    10.1109/ISLC.1990.764424
  • Filename
    764424
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2798382