Title :
High gain, high efficiency, low voltage, medium power Si-bipolar transistor suitable for integration
Author :
van Rijs, F. ; Dekker, R. ; Magnee, P.H.C. ; Vanoppen, R. ; v.d.Heijden, E. ; Balm, B.N. ; Colussi, L.C.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
Medium power transistors in a high performance double polysilicon bipolar process have been fabricated. On-wafer loadpull measurements show high gain (15 dB) and high maximum efficiency (60%) at 1.8 GHz with 27 dBm of output power. These results were obtained with a low supply voltage of 3.5 V. More importantly, these results were obtained with transistors with a buried layer having a collector contact at the top, which makes it possible to integrate power amplifiers on chip.
Keywords :
UHF bipolar transistors; UHF integrated circuits; UHF measurement; UHF power amplifiers; characteristics measurement; elemental semiconductors; power bipolar transistors; silicon; 1.8 GHz; 15 dB; 3.5 V; 60 percent; Si; bipolar transistor; buried layer; collector contact; double polysilicon bipolar process; medium power transistors; on-wafer loadpull measurements; output power; supply voltage; Bipolar transistors; Bonding; Gain; Isolation technology; Laboratories; Low voltage; Power generation; Power transistors; Silicon; Wireless communication;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-4063-9
DOI :
10.1109/RFIC.1997.598732
