DocumentCode :
2798462
Title :
SOI membrane-based pressure sensor in stress sensitive differential amplifier configuration
Author :
Brezeanu, Mihai ; Dumitru, V. ; Costea, Stefan ; Ali, Syed Zishan ; Udrea, F. ; Gologanu, M. ; Bostan, C. ; Georgescu, Ion ; Avramescu, Viorel ; Buiu, Octavian
Author_Institution :
Sensors & Wireless Lab. Bucharest, Honeywell Romania SRL, Bucharest, Romania
Volume :
1
fYear :
2012
fDate :
15-17 Oct. 2012
Firstpage :
153
Lastpage :
156
Abstract :
This paper introduces a pressure sensing structure configured as a stress sensitive differential amplifier (SSDA), built on a Silicon-on-Insulator (SOI) membrane. Theoretical calculation show the significant increase in sensitivity which is expected from the pressure sensors in SSDA configuration compared to the traditional Wheatstone bridge circuit. Preliminary experimental measurements, performed on individual transistors placed on the membrane, exhibit state-the-art sensitivity values (1.45mV/mbar).
Keywords :
differential amplifiers; pressure sensors; silicon-on-insulator; stress analysis; SOI; SSDA configuration; membrane-based pressure sensor; silicon-on-insulator; stress sensitive differential amplifier; transistors; MOSFETs; Sensitivity; Strain; Stress; Temperature sensors; Piezoresistive; Pressure Sensor; SOI; Stress Sensitive Differential Amplifier (SSDA);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference (CAS), 2012 International
Conference_Location :
Sinaia
ISSN :
1545-857X
Print_ISBN :
978-1-4673-0737-6
Type :
conf
DOI :
10.1109/SMICND.2012.6400669
Filename :
6400669
Link To Document :
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