SOI membrane-based pressure sensor in stress sensitive differential amplifier configuration

Author

Brezeanu, Mihai ; Dumitru, V. ; Costea, Stefan ; Ali, Syed Zishan ; Udrea, F. ; Gologanu, M. ; Bostan, C. ; Georgescu, Ion ; Avramescu, Viorel ; Buiu, Octavian

Author_Institution

Sensors & Wireless Lab. Bucharest, Honeywell Romania SRL, Bucharest, Romania

Volume

1

fYear

2012

fDate

15-17 Oct. 2012

Firstpage

153

Lastpage

156

Abstract

This paper introduces a pressure sensing structure configured as a stress sensitive differential amplifier (SSDA), built on a Silicon-on-Insulator (SOI) membrane. Theoretical calculation show the significant increase in sensitivity which is expected from the pressure sensors in SSDA configuration compared to the traditional Wheatstone bridge circuit. Preliminary experimental measurements, performed on individual transistors placed on the membrane, exhibit state-the-art sensitivity values (1.45mV/mbar).

Keywords

differential amplifiers; pressure sensors; silicon-on-insulator; stress analysis; SOI; SSDA configuration; membrane-based pressure sensor; silicon-on-insulator; stress sensitive differential amplifier; transistors; MOSFETs; Sensitivity; Strain; Stress; Temperature sensors; Piezoresistive; Pressure Sensor; SOI; Stress Sensitive Differential Amplifier (SSDA);

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2012 International

Conference_Location

Sinaia

ISSN

1545-857X

Print_ISBN

978-1-4673-0737-6

Type

conf

DOI

10.1109/SMICND.2012.6400669

Filename

6400669