DocumentCode
2798512
Title
Reduction of stray inductance in power electronic modules using basic switching cells
Author
Li, Shengnan ; Tolbert, Leon M. ; Wang, Fred ; Peng, Fang Zheng
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of Tennessee, Knoxville, TN, USA
fYear
2010
fDate
12-16 Sept. 2010
Firstpage
2686
Lastpage
2691
Abstract
This paper introduces the concepts of two basic switching cells, P-cell and N-cell, along with their implications in power electronic circuits. The basic switching cells exist in almost every power electronic circuit. To take advantage of these structures, this paper proposes a novel packaging method for power electronics modules. The proposed packaging method uses the basic switching cells as the unit in a module, instead of traditional anti-parallel connection of active switch and diode. This rearrangement can reduce the stray inductance in the current commutation pass; therefore, the performance and reliability of the power device module and the power electronic system can be improved. A conventional phase leg module and a proposed module are modeled. Electromagnetic simulation is carried out to extract the stray inductance from the two modules. Switching behavior under different package parasitics is studied based on Saber simulation.
Keywords
electronics packaging; insulated gate bipolar transistors; power electronics; N-cell; P-cell; Saber simulation; basic switching cells; packaging method; power electronic circuit; power electronic modules; stray inductance reduction; Converters; Inductance; Insulated gate bipolar transistors; Leg; Switches; Switching circuits; IGBT module; N-cell; P-cell; package; stray inductance; wire-bond;
fLanguage
English
Publisher
ieee
Conference_Titel
Energy Conversion Congress and Exposition (ECCE), 2010 IEEE
Conference_Location
Atlanta, GA
Print_ISBN
978-1-4244-5286-6
Electronic_ISBN
978-1-4244-5287-3
Type
conf
DOI
10.1109/ECCE.2010.5618040
Filename
5618040
Link To Document