• DocumentCode
    2798597
  • Title

    A low threshold current 1.5/spl mu/m AlGaInAs/InGaAs MQW laser and its complete disordering by ZN diffusion

  • Author

    Goto, K. ; Omura, E. ; Uesugi, H. ; Takahashi, S. ; Mihashi, Y. ; Namizaki, H. ; Aiga, M.

  • Author_Institution
    Mitsubishi Electric Corporation
  • fYear
    1990
  • fDate
    9-14 Sept. 1990
  • Firstpage
    84
  • Lastpage
    85
  • Keywords
    Artificial intelligence; Indium gallium arsenide; Indium phosphide; Laser theory; Lattices; Optical materials; Quantum well devices; Threshold current; X-ray lasers; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
  • Conference_Location
    Davos, Switzerland
  • Type

    conf

  • DOI
    10.1109/ISLC.1990.764438
  • Filename
    764438
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2798597