DocumentCode :
2798597
Title :
A low threshold current 1.5/spl mu/m AlGaInAs/InGaAs MQW laser and its complete disordering by ZN diffusion
Author :
Goto, K. ; Omura, E. ; Uesugi, H. ; Takahashi, S. ; Mihashi, Y. ; Namizaki, H. ; Aiga, M.
Author_Institution :
Mitsubishi Electric Corporation
fYear :
1990
fDate :
9-14 Sept. 1990
Firstpage :
84
Lastpage :
85
Keywords :
Artificial intelligence; Indium gallium arsenide; Indium phosphide; Laser theory; Lattices; Optical materials; Quantum well devices; Threshold current; X-ray lasers; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
Conference_Location :
Davos, Switzerland
Type :
conf
DOI :
10.1109/ISLC.1990.764438
Filename :
764438
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2798597
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