Title :
Radiative and non-radiative recombination mechanisms in 1.5/spl mu/m MQW lasers
Author :
Rideout, W.C. ; LaCourse, J. ; Lauer, R.B.
Author_Institution :
GTE Laboratories Incorporated
Keywords :
Charge carrier density; Charge carrier lifetime; Current measurement; Density measurement; Gain measurement; Quantum well devices; Quantum well lasers; Radiative recombination; Temperature; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
Conference_Location :
Davos, Switzerland
DOI :
10.1109/ISLC.1990.764439
