DocumentCode :
2798667
Title :
Gain and spontaneous emission measurements in GaAlAs quantum well lasers
Author :
Kesler, M.P. ; Harder, Ch.
Author_Institution :
IBM Research Laboratory Zurich
fYear :
1990
fDate :
9-14 Sept. 1990
Firstpage :
94
Lastpage :
95
Keywords :
Absorption; Charge carrier density; Energy states; Gain measurement; Laboratories; Laser modes; Quantum well lasers; Reflectivity; Semiconductor lasers; Spontaneous emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
Conference_Location :
Davos, Switzerland
Type :
conf
DOI :
10.1109/ISLC.1990.764442
Filename :
764442
Link To Document :
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