Title :
Scaling effects on the gate capacitance of graphene nanoribbon transistors
Author :
Kliros, George S.
Author_Institution :
Dept. of Electron. & Commun. Eng., Hellenic Air-Force Acad., Dekeleia, Greece
Abstract :
Scaling effects on the gate capacitance of graphene nanoribbon field-effect transistors (GNRFETs) are studied by means of a semi-analytical model. The influence of nanoribbon width, gateinsulator thickness and dielectric constant scaling on the capacitance - voltage characteristics is explored. Gate capacitance has non-monotonic behavior with ripples for thin and high-k gate-insulators. However, beyond the quantum capacitance limit, the ripples are suppressed and smooth monotonic characteristics are obtained.
Keywords :
field effect transistors; graphene; nanoribbons; GNRFET; dielectric constant scaling; gate capacitance; gate-insulator thickness; graphene nanoribbon field-effect transistors; high-k gate-insulators; nanoribbon width; quantum capacitance limit; scaling effects; thin gate-insulators; Dielectric constant; Insulators; Logic gates; Quantum capacitance; Transistors; Gate capacitance; Graphene nanoribbon transistors; Quantum capacitance; Scaling effects;
Conference_Titel :
Semiconductor Conference (CAS), 2012 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4673-0737-6
DOI :
10.1109/SMICND.2012.6400691
