Scaling effects on the gate capacitance of graphene nanoribbon transistors

Author

Kliros, George S.

Author_Institution

Dept. of Electron. & Commun. Eng., Hellenic Air-Force Acad., Dekeleia, Greece

Volume

1

fYear

2012

fDate

15-17 Oct. 2012

Firstpage

83

Lastpage

86

Abstract

Scaling effects on the gate capacitance of graphene nanoribbon field-effect transistors (GNRFETs) are studied by means of a semi-analytical model. The influence of nanoribbon width, gateinsulator thickness and dielectric constant scaling on the capacitance - voltage characteristics is explored. Gate capacitance has non-monotonic behavior with ripples for thin and high-k gate-insulators. However, beyond the quantum capacitance limit, the ripples are suppressed and smooth monotonic characteristics are obtained.

Keywords

field effect transistors; graphene; nanoribbons; GNRFET; dielectric constant scaling; gate capacitance; gate-insulator thickness; graphene nanoribbon field-effect transistors; high-k gate-insulators; nanoribbon width; quantum capacitance limit; scaling effects; thin gate-insulators; Dielectric constant; Insulators; Logic gates; Quantum capacitance; Transistors; Gate capacitance; Graphene nanoribbon transistors; Quantum capacitance; Scaling effects;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2012 International

Conference_Location

Sinaia

ISSN

1545-857X

Print_ISBN

978-1-4673-0737-6

Type

conf

DOI

10.1109/SMICND.2012.6400691

Filename

6400691