Title :
Improved mass-transported GaInP/GaAs lasers
Author :
Walpole, J.N. ; Groves, S.H. ; Liau, Z.L. ; Palmateer, S.C. ; Tsang, D.Z.
Author_Institution :
Massachusetts Institute of Technology
Keywords :
DH-HEMTs; Gallium arsenide; Laboratories; Optical device fabrication; Optical materials; Optical pulses; Photonic band gap; Space vector pulse width modulation; Surface emitting lasers; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
Conference_Location :
Davos, Switzerland
DOI :
10.1109/ISLC.1990.764468
