DocumentCode :
2799050
Title :
Investigation of the mirror temperature of narrowstripe GaAs/AlGaAs quantum well lasers with segmented contacts
Author :
Hanke, Chr. ; Herrmann, F.U. ; Beeck, S.
Author_Institution :
Siemens Research Laboratories, W. Schottky Institute
fYear :
1990
fDate :
9-14 Sept. 1990
Firstpage :
156
Lastpage :
157
Keywords :
Absorption; Charge carrier density; Contacts; Degradation; Gallium arsenide; Mirrors; Optical pumping; Power lasers; Quantum well lasers; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
Conference_Location :
Davos, Switzerland
Type :
conf
DOI :
10.1109/ISLC.1990.764470
Filename :
764470
Link To Document :
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