Title :
Radiation response of MOSFET´s parameters as a function of measurement temperature
Author :
Belyakov, V.V. ; Zebrev, G.I. ; Shvetzov-Shilovsky, I.N. ; Useinov, R.G.
Author_Institution :
Eng. Phys. Inst., Moscow, Russia
Abstract :
The postirradiation response of the MOSFET´s transconductance and logarithmic slope has been studied as a function of measurement temperatures. It is found that the temperature dependence of the postirradiation change in transconductance cannot be accounted for by the occurrence of additional scattering centers. These results suggest that mainly an additional recharging through the radiation-induced interface traps rather than a change in microscopic mobility determine the postirradiation variation of transconductance. An analysis of the effect and a convenient procedure for parameter extraction are presented
Keywords :
MOSFET; X-ray effects; carrier mobility; interface states; semiconductor device measurement; MOSFET; interface traps; logarithmic slope; measurement temperature dependence; mobility; parameter extraction; radiation response; scattering centers; transconductance; Capacitance; Density measurement; Electron mobility; Instruments; MOSFET circuits; Microscopy; Scattering; Temperature measurement; Transconductance; Voltage;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location :
Cannes
Print_ISBN :
0-7803-4071-X
DOI :
10.1109/RADECS.1997.698878
