Title :
Recent progress in polarization bistable VCSELs
Author :
Kawaguchi, Hitoshi
Author_Institution :
Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Ikoma, Japan
Abstract :
We overview recent status of polarization-bistable VCSELs and their applications to optical buffer memory. All-optical flip-flop operation was achieved at a record low bias current of 0.85 mA using 980 nm polarization-bistable VCSELs with an oxidation confinement structure. Using four 1.55 μm polarization-bistable VCSELs, we constructed a 4 bit optical buffer memory. Here, two sets of the shift-register memory connected in parallel.
Keywords :
optical bistability; optical logic; optical storage; surface emitting lasers; all-optical flip-flop operation; current 0.85 mA; optical buffer memory; oxidation confinement structure; polarization bistable VCSEL; shift-register memory; wavelength 1.55 mum; wavelength 980 nm; word length 4 bit; Flip-flops; Optical bistability; Optical buffering; Optical polarization; Optical switches; Oxidation; Vertical cavity surface emitting lasers; all-optical flip-flop; buffer memory; polarization bistability; shift register; vertical-cavity surface-emitting laser;
Conference_Titel :
Transparent Optical Networks (ICTON), 2012 14th International Conference on
Conference_Location :
Coventry
Print_ISBN :
978-1-4673-2228-7
Electronic_ISBN :
2161-2056
DOI :
10.1109/ICTON.2012.6254393
