Title :
InP-based 1.3 μm and 1.55 μm short-cavity VCSELs suitable for telecom- and datacom-applications
Author :
Müller, Michael ; Grasse, Christian ; Amann, Markus Christian
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
Abstract :
We review the state-of the art of long-wavelength VCSELs. Furthermore, the short-cavity concept which has already been successfully implemented in 1.55 μm devices is extended to 1.3 μm devices resulting in excellent static and dynamic device properties. In particular, high output powers of 1.8 mW at an ambient temperature of 80 °C, high differential quantum efficiencies up to 56% and wall-plug efficiencies up to 36% at room-temperature are reported. Small-signal modulation bandwidths in excess of 15 GHz are presented. The large-signal modulation at a bit-rate of 25 Gbps is investigated.
Keywords :
III-V semiconductors; indium compounds; surface emitting lasers; InP; bit rate 25 Gbit/s; datacom-applications; dynamic device; frequency 15 GHz; high differential quantum efficiencies; large-signal modulation; power 1.8 mW; short-cavity VCSEL; short-cavity concept; small-signal modulation; static device; telecom-applications; temperature 80 C; wall-plug efficiencies; wavelength 1.3 mum; wavelength 1.55 mum; Bandwidth; Damping; Modulation; Optical fiber communication; Optical fiber devices; Temperature; Vertical cavity surface emitting lasers; InP; PON; Vertical-Cavity Surface-Emitting Laser (VCSEL); access networks; direct modulation; frequency response; optical communication; optical interconnects; semiconductor lasers;
Conference_Titel :
Transparent Optical Networks (ICTON), 2012 14th International Conference on
Conference_Location :
Coventry
Print_ISBN :
978-1-4673-2228-7
Electronic_ISBN :
2161-2056
DOI :
10.1109/ICTON.2012.6254394
