• DocumentCode
    2799213
  • Title

    Room temperature CW operation of all-MOCVD-grown SQW lasers on Si using AlGaAs/AlGaP intermediate layers

  • Author

    Egawa, T. ; Soga, T. ; Jimbo, T. ; Umeno, M.

  • Author_Institution
    Nagoya Institute of Technology
  • fYear
    1990
  • fDate
    9-14 Sept. 1990
  • Firstpage
    180
  • Lastpage
    181
  • Keywords
    Coatings; Electrons; Gallium arsenide; MOCVD; Quantum well lasers; Rough surfaces; Surface emitting lasers; Surface morphology; Surface roughness; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
  • Conference_Location
    Davos, Switzerland
  • Type

    conf

  • DOI
    10.1109/ISLC.1990.764480
  • Filename
    764480