DocumentCode
2799213
Title
Room temperature CW operation of all-MOCVD-grown SQW lasers on Si using AlGaAs/AlGaP intermediate layers
Author
Egawa, T. ; Soga, T. ; Jimbo, T. ; Umeno, M.
Author_Institution
Nagoya Institute of Technology
fYear
1990
fDate
9-14 Sept. 1990
Firstpage
180
Lastpage
181
Keywords
Coatings; Electrons; Gallium arsenide; MOCVD; Quantum well lasers; Rough surfaces; Surface emitting lasers; Surface morphology; Surface roughness; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
Conference_Location
Davos, Switzerland
Type
conf
DOI
10.1109/ISLC.1990.764480
Filename
764480
Link To Document