Title :
Carrier recombination rates in GaAs/AlGaAs and strained InGaAs/GaAs quantum wells under high levels of excitation
Author :
Chen, Y.C. ; Waters, R.G. ; Coleman, J.J. ; Bour, D.P. ; Wang, P.
Author_Institution :
City University of New York, McDonnell Douglas Electronic Systems, University of Illinois, Sarnoff Research Center
Keywords :
Charge carrier density; Charge carrier lifetime; Gallium arsenide; Indium gallium arsenide; Laser excitation; Pulse measurements; Quantum well lasers; Radiative recombination; Semiconductor lasers; Spontaneous emission;
Conference_Titel :
Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
Conference_Location :
Davos, Switzerland
DOI :
10.1109/ISLC.1990.764481
