DocumentCode :
2799257
Title :
Threshold-current-analysis of InGaAs/InGaAsP multi-quantum-well-separate- confinement-lasers
Author :
Rosenzweig, M. ; Moehrle, M. ; Dueser, H. ; Fidorra, F. ; Venghaus, H.
Author_Institution :
Heinrich-Hertz-Institut fuer Nachrichtentechnik Berlin GmbH
fYear :
1990
fDate :
9-14 Sept. 1990
Firstpage :
186
Lastpage :
187
Keywords :
Current density; DH-HEMTs; Diode lasers; Frequency response; Indium gallium arsenide; Optical saturation; Quantum well devices; Quantum well lasers; Temperature; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
Conference_Location :
Davos, Switzerland
Type :
conf
DOI :
10.1109/ISLC.1990.764483
Filename :
764483
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2799257
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