DocumentCode :
2799294
Title :
Influence of the P type doping of the InP cladding layer on the threshold current density in 1.5/spl mu/m Q.W. lasers
Author :
Sermage, B. ; Blez, M. ; Kazmierski, C. ; Ougazzaden, A. ; Mircea, A. ; Bouley, J.C.
Author_Institution :
Centre National D´´Etudes des Telecommunications
fYear :
1990
fDate :
9-14 Sept. 1990
Firstpage :
192
Lastpage :
193
Keywords :
Absorption; Doping; Electromagnetic waveguides; Indium gallium arsenide; Indium phosphide; Laser theory; Optical scattering; Optical waveguides; Quantum well lasers; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
Conference_Location :
Davos, Switzerland
Type :
conf
DOI :
10.1109/ISLC.1990.764486
Filename :
764486
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2799294
بازگشت