Title :
HBT IC technologies and applications in Japan
Author :
Hirayama, Masahiro ; Honjo, Kazuhiko ; Obara, Masao ; Yokoyama, Naoki
Author_Institution :
NTT LSI Lab., Atsugi, Japan
Abstract :
The HBT ICs now being developed in Japan will be mainly applied to optical communication systems for broadband digital networks. The authors have already confirmed IC performance of up to 10 Gb/s operation and development for microwave systems is getting underway. Market size is estimated from approximate figures of systems in use.<>
Keywords :
bipolar integrated circuits; heterojunction bipolar transistors; integrated circuit technology; 10 Gbit/s; HBT ICs; IC technologies; Japan; Application specific integrated circuits; Fabrication; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Laboratories; MESFETs; National electric code; Research and development; Silicon;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172619
