Title :
Single 2.2 V operation MMIC power amplifier utilizing SrTiO/sub 3/ capacitors for 2.4 GHz wireless communication systems
Author :
Nishimura, T.B. ; Yamaguchi, K. ; Iwata, N. ; Tomita, M. ; Takemura, K. ; Kuzuhara, M. ; Miyasaka, Y.
Author_Institution :
Electron. Res. Labs., NEC Corp., Otsu, Japan
Abstract :
This paper describes single 2.2 V operation of a two-stage MMIC power amplifier for 2.4 GHz wireless local area network applications. The MMIC with 0.76/spl times/ 0.96 mm/sup 2/ area is composed of n-AlGaAs/InGaAs/n-AlGaAs FETs with a shallow threshold voltage of -0.24 V and SrTiO/sub 3/ capacitors. The capacitors with a high relative dielectric constant of 180 were employed. Under single 2.2 V operation, the developed MMIC delivered an output power of 22.6 dBm (182 mW) and a power-added efficiency of 33.2% with an associated gain of 22.7 dB at 2.48 GHz.
Keywords :
III-V semiconductors; MMIC power amplifiers; aluminium compounds; capacitors; field effect MMIC; gallium arsenide; indium compounds; integrated circuit design; wireless LAN; 182 mW; 2.2 V; 2.4 GHz; 22.7 dB; 33.2 percent; AlGaAs-InGaAs-AlGaAs; MMIC power amplifier; n-AlGaAs/InGaAs/n-AlGaAs FET; output power; power-added efficiency; relative dielectric constant; shallow threshold voltage; wireless communication systems; wireless local area network; Capacitors; FETs; High-K gate dielectrics; Indium gallium arsenide; MMICs; Operational amplifiers; Power amplifiers; Power generation; Threshold voltage; Wireless LAN;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-4063-9
DOI :
10.1109/RFIC.1997.598737
