Title :
A Novel Barrier Controlled Tunnel FET
Author :
Hao Wang ; Sheng Chang ; Yue Hu ; Hongyu He ; Jin He ; Qijun Huang ; He, F. ; Gaofeng Wang
Author_Institution :
Sch. of Electron. Eng. & Comput. Sci., Peking Univ., Beijing, China
Abstract :
A novel structure of tunnel field-effect transistor (FET) is introduced with the gate composed of three segments of different work functions. The tunnel current is controlled by an in channel potential barrier as well as the source-channel tunnel junction bandgap, which combines the merits of both bandgap-controlled tunnel FET and barrier-controlled traditional MOSFET. Intuitive explanation is provided for this novel device structure. The performance enhancement is confirmed by numerical simulation with carbon nanotube as the channel material. This structure is especially suitable for bandgap tunable ballistic transport materials (e.g., carbon nanotube and graphene nanoribbon).
Keywords :
ballistic transport; carbon nanotube field effect transistors; tunnel transistors; work function; MOSFET; bandgap tunable ballistic transport materials; barrier controlled tunnel FET; carbon nanotube; channel material; source channel tunnel junction bandgap; tunnel current; tunnel field effect transistor; work functions; Carbon nanotubes; Educational institutions; Field effect transistors; Logic gates; Materials; Photonic band gap; Tunnel field effect transistor (TFET); barrier controlled device; carbon nanotube (CNT); numerical simulation; numerical simulation.; work function;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2325058
