DocumentCode :
2799515
Title :
1/4 miniaturized passive elements for GaAs MMICs
Author :
Hirano, Makoto ; Imai, Yuhki ; Asai, Kazuyoshi
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
fYear :
1991
fDate :
20-23 Oct. 1991
Firstpage :
37
Lastpage :
40
Abstract :
Novel miniature structures for passive elements-inductors and capacitors-are proposed to reduce the area they consume in GaAs MMICs. The miniaturized inductors are fabricated out of thick metal micro-wire, 10 mu m thick, 6 mu m wide, and with 2 mu m spacing. The miniaturized capacitors are constructed as a corrugated structure with an insulator layer sandwiched between electrodes on a SI GaAs substrate with 3- mu m-deep taper holes, in a checkerboard pattern. Both elements are fabricated employing very simple technology as a result of their monolayer structures. Adopting the proposed structures, the elements have been shrunk to 1/4 the size of conventional elements.<>
Keywords :
III-V semiconductors; MMIC; capacitors; gallium arsenide; inductors; integrated circuit technology; GaAs; MMICs; corrugated structure; miniaturized capacitors; miniaturized inductors; miniaturized passive elements; semi-insulating substrate; Capacitance; Capacitors; Electrodes; Fabrication; Gallium arsenide; Inductors; MMICs; Nonhomogeneous media; Spirals; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
Type :
conf
DOI :
10.1109/GAAS.1991.172628
Filename :
172628
Link To Document :
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