DocumentCode :
2799523
Title :
Interval-valued statistical modeling of oxide chemical-mechanical polishing
Author :
Ma, James D. ; Fang, Claire F. ; Rutenbar, Rob A. ; Xie, Xiaolin ; Boning, Duane S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., New York, NY, USA
fYear :
2005
fDate :
6-10 Nov. 2005
Firstpage :
141
Lastpage :
148
Abstract :
Technology-oriented tools provide the raw data needed to optimize the fabrication process itself, and to predict problematic variational impacts on silicon design. Unfortunately, even in these physics-oriented tools, statistically uncertain quantities appear as crucial inputs. To date, Monte Carlo techniques have been the dominant solution method. We suggest an alternative in which uncertainties are represented as correlated intervals, and interval-valued computations replace the standard scalar operations in the numerical algorithm for the tool. We use an oxide chemical-mechanical polishing tool as an example, and show how to "retrofit" workable statistical models on top of the original algorithm. Accuracies to within ∼1-10% of Monte Carlo simulation, and speedups of ∼10-100X can be achieved, depending on whether we choose a formulation which emphasizes accuracy, or efficiency.
Keywords :
chemical mechanical polishing; semiconductor process modelling; statistical analysis; interval-valued computations; interval-valued statistical modeling; oxide chemical-mechanical polishing; process variational impacts; Chemical technology; Design optimization; Fabrication; Integrated circuit interconnections; Monte Carlo methods; Nanoscale devices; Predictive models; Semiconductor device modeling; Silicon; Uncertainty;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer-Aided Design, 2005. ICCAD-2005. IEEE/ACM International Conference on
Print_ISBN :
0-7803-9254-X
Type :
conf
DOI :
10.1109/ICCAD.2005.1560054
Filename :
1560054
Link To Document :
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