Title :
A 15-GHz AlGaAs/GaAs HBT limiting amplifier with low phase deviation
Author :
Nakamura, Makoto ; Imai, Yuhki ; Sano, Eiichi ; Yamauchi, Yoshiki ; Nakajima, Osaake
Author_Institution :
NTT LSI Lab., Kanagawa, Japan
Abstract :
The design and performance of a 15-GHz AlGaAs/GaAs HBT limiting amplifier is presented. The key feature of the circuit design is a differential configuration with an emitter peaking technique to realize a low phase deviation and wide frequency band. A high-frequency operation of 15 GHz with a gain of 25 dB and a low phase shift deviation of 3 degrees over a 15-dB input dynamic range has been achieved.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; microwave amplifiers; 15 GHz; 25 dB; AlGaAs-GaAs; HBT limiting amplifier; SHF; differential configuration; emitter peaking technique; low phase deviation; wide frequency band; Capacitance; Circuit synthesis; Differential amplifiers; Dynamic range; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Optical amplifiers; Optical receivers; Semiconductor optical amplifiers;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172630
