DocumentCode :
2799599
Title :
Cost-Effective TSV Grouping for Yield Improvement of 3D-ICs
Author :
Zhao, Yi ; Khursheed, Saqib ; Al-Hashimi, Bashir M.
Author_Institution :
Sch. of Electron. & Comput. Sci., Univ. of Southampton, Southampton, UK
fYear :
2011
fDate :
20-23 Nov. 2011
Firstpage :
201
Lastpage :
206
Abstract :
Three-dimensional Integrated Circuits (3D-ICs) vertically stack multiple silicon dies to reduce overall wire length, power consumption, and allow integration of heterogeneous technologies. Through-silicon-vias (TSVs) which act as vertical links between layers pose challenges for 3D integration design. TSV defects can happen in fabrication process and bonding stage, which can reduce the yield and increase the cost. Recent work proposed the employment of redundant TSVs to improve the yield of 3D-ICs. This paper presents a redundant TSVs grouping technique, which partitions regular and redundant TSVs into groups. For each group, a set of multiplexers are used to select good signal paths away from defective TSVs. We investigate the impact of grouping ratio (regular-to-redundant TSVs in one group) on trade-off between yield and hardware overhead. We also show probabilistic models for yield analysis under the influence of independent and clustering defect distributions. Simulation results show that for a given number of TSVs and TSV failure rate, careful selection of grouping ratios lead to achieving 100% yield at minimal hardware cost (number of multiplexers and redundant TSVs) in comparison to a design that does not exploit TSV grouping ratios.
Keywords :
integrated circuit yield; three-dimensional integrated circuits; 3DIC; cost-effective TSV grouping; three-dimensional integrated circuits; through-silicon-vias; vertically stack multiple silicon dies; yield analysis; yield improvement; Bonding; Hardware; Multiplexing; Neodymium; Probability; Redundancy; Through-silicon vias; 3D-IC; TSV; defect; yield;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Test Symposium (ATS), 2011 20th Asian
Conference_Location :
New Delhi
ISSN :
1081-7735
Print_ISBN :
978-1-4577-1984-4
Type :
conf
DOI :
10.1109/ATS.2011.37
Filename :
6114536
Link To Document :
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