A single-chip K-band receiver

Author

Yang, H. ; Angel, K.W. ; Fry, K.N.

Author_Institution

Magnavox Gov. & Ind. Electron. Co., Torrance, CA, USA

fYear

1991

fDate

20-23 Oct. 1991

Firstpage

57

Lastpage

60

Abstract

A high-complexity, single-chip K-band receiver, implemented in a GaAs MESFET IC, is demonstrated. This chip contains an RF amplifier, a dual-gate mixer, a rat-race hybrid, a balanced FET doubler, an L-band IF amplifier, and an on-chip filter. The chip size is 110*160 square mils. The chip shows an RF to IF conversion gain of 30 dB, and the spurious response at least 50 dB lower than the signal. The DC power consumption for this single-chip receiver is 580 mW.<>

Keywords

III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; radio receivers; 30 dB; 580 mW; DC power consumption; GaAs; K-band receiver; L-band IF amplifier; MESFET IC; MMIC; RF amplifier; RF to IF conversion gain; balanced FET doubler; dual-gate mixer; on-chip filter; rat-race hybrid; single chip type; Bonding; Distributed parameter circuits; Equivalent circuits; FETs; Filters; Gallium arsenide; K-band; Power transmission lines; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-0196-X

Type

conf

DOI

10.1109/GAAS.1991.172633

Filename

172633