Title :
Heterostructure MESFET devices for VLSI applications
Author_Institution :
Rockwell Int. Corp., Newbury Park, CA, USA
Abstract :
Manufacturing of heterostructure ICs at VLSI integration levels has heretofore not been realized. Recently, epitaxial material quality and availability has improved dramatically with the proliferation of low-pressure metalorganic-chemical-vapor-deposition (LP-MOCVD) material. In addition, the quality of GaAs IC manufacturing has steadily improved in integration level and density of interconnect. As a result, complexity consistent with the fabrication of VLSI structures is now feasible using LP-MOCVD material with H-MESFET technology. Results are presented which were obtained using the H-MESFET approach to achieve high density, VLSI complexity GaAs ICs.<>
Keywords :
Schottky gate field effect transistors; VLSI; field effect integrated circuits; integrated circuit manufacture; integrated circuit technology; vapour phase epitaxial growth; GaAs; IC manufacturing; LP-MOCVD material; VLSI applications; epitaxial material quality; heterostructure ICs; heterostructure MESFET devices; low-pressure; metalorganic-chemical-vapor-deposition; Computer aided analysis; FETs; Fabrication; Gallium arsenide; Inorganic materials; MESFETs; Manufacturing; Molecular beam epitaxial growth; Production; Very large scale integration;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172635
