Title :
MESFET destruction model and experimental validation
Author :
Telliez, Sophie ; Brasile, J.P. ; Samama, N.
Author_Institution :
IUP du Littoral, Calais, France
Abstract :
This paper presents a new behavioral model of GaAs MESFETs when subjected to power pulses. This basic model appears to fit published experimental results satisfactorily and is shown to be precise enough for a first estimate of the power needed to disturb or destroy the considered components
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; GaAs; GaAs MESFET; behavioral model; destruction model; power pulse; Current density; Electromagnetic compatibility; Electromagnetic modeling; Frequency; Gallium arsenide; MESFETs; Power system modeling; Pulse modulation; Temperature sensors; Thermal resistance;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location :
Cannes
Print_ISBN :
0-7803-4071-X
DOI :
10.1109/RADECS.1997.698881
