Title :
A GaAs non-volatile memory
Author :
Harrington, D.L. ; Gee, W.C. ; Fay, J.F. ; Leybovich, I.S. ; Naik, I.K. ; Nicalek, T.P. ; Maderic, B.P. ; Sanchez, L.E. ; Stoddard, M.W. ; Troeger, G.L. ; Watanabe, S.H. ; Wu, S.Y. ; Notthoff, J.K.
Author_Institution :
McDonnell Douglas Electron. Syst. Co., Santa Ana, CA, USA
Abstract :
A GaAs non-volatile memory that retains data without power by using a ferroelectric capacitor memory storage element has been developed. A complete 2 K/4 K bit ferroelectric random access memory (FERRAM) and two test modules have been fabricated. Initial results on the test modules and the FERRAM have demonstrated the feasibility of this approach. This is believed to be the first demonstration of a non-volatile memory circuit using GaAs technology.<>
Keywords :
III-V semiconductors; ferroelectric storage; gallium arsenide; integrated memory circuits; 2 kbit; 4 kbit; FERRAM; GaAs; PZT films; PbZrO3TiO3; ferroelectric capacitor memory storage element; ferroelectric random access memory; non-volatile memory; nonvolatile storage; Capacitors; Circuit testing; Dielectric thin films; Ferroelectric materials; Gallium arsenide; Hysteresis; Nonvolatile memory; Polarization; Random access memory; Thin film circuits;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172637
