Title :
High temperature characterization system for silicon carbide devices
Author :
Teodorescu, Laurentiu ; Draghici, F. ; Brezeanu, G. ; Rusu, Irena
Author_Institution :
Univ. Politeh. of Bucharest, Bucharest, Romania
Abstract :
In this paper it is described a design technique used to collect and analyse power devices characteristics in high temperatures domain. Following this technique, a complete hardware and software platform is built for thermal characterization of power devices.
Keywords :
power semiconductor devices; silicon compounds; temperature; SiC; hardware platform; high temperature characterization system; power devices characteristics; silicon carbide device; software platform; thermal characterization; Furnaces; Heating; Microcontrollers; Silicon carbide; Temperature; Temperature measurement; Temperature sensors;
Conference_Titel :
Semiconductor Conference (CAS), 2012 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4673-0737-6
DOI :
10.1109/SMICND.2012.6400734
