DocumentCode
2799654
Title
High temperature characterization system for silicon carbide devices
Author
Teodorescu, Laurentiu ; Draghici, F. ; Brezeanu, G. ; Rusu, Irena
Author_Institution
Univ. Politeh. of Bucharest, Bucharest, Romania
Volume
2
fYear
2012
fDate
15-17 Oct. 2012
Firstpage
449
Lastpage
452
Abstract
In this paper it is described a design technique used to collect and analyse power devices characteristics in high temperatures domain. Following this technique, a complete hardware and software platform is built for thermal characterization of power devices.
Keywords
power semiconductor devices; silicon compounds; temperature; SiC; hardware platform; high temperature characterization system; power devices characteristics; silicon carbide device; software platform; thermal characterization; Furnaces; Heating; Microcontrollers; Silicon carbide; Temperature; Temperature measurement; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2012 International
Conference_Location
Sinaia
ISSN
1545-857X
Print_ISBN
978-1-4673-0737-6
Type
conf
DOI
10.1109/SMICND.2012.6400734
Filename
6400734
Link To Document