DocumentCode
2799681
Title
An active switch improved Dickson Charge Pump implemented in a BCD process
Author
Joita, Adrian ; Matei, Vinatoru ; Profirescu, O. ; Nedelcu, Steluta ; Bodea, Mircea ; Profirescu, M.
Author_Institution
ROHM Semicond. Eur. Design Centre, Willich, Germany
Volume
2
fYear
2012
fDate
15-17 Oct. 2012
Firstpage
437
Lastpage
440
Abstract
The paper presents a new improved integrated charge pump based on the use of both enhanced and depletion MOS transistors as active switches and charge transfer devices in order to accommodate the voltage class requirements specific to the BCD technology. A two stage design was implemented using 2.5 MHz clock frequency to drive the charge pump capacitors.
Keywords
MOSFET; capacitors; charge pump circuits; switches; BCD process; BCD technology; active switch improved Dickson charge pump; charge pump capacitors; charge transfer devices; depletion MOS transistors; enhanced MOS transistors; frequency 2.5 MHz; Capacitors; Charge pumps; Clocks; MOSFETs; Switches; Switching circuits; BCD; Charge pump; depletion nMOS transistors; switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2012 International
Conference_Location
Sinaia
ISSN
1545-857X
Print_ISBN
978-1-4673-0737-6
Type
conf
DOI
10.1109/SMICND.2012.6400737
Filename
6400737
Link To Document