Title :
An active switch improved Dickson Charge Pump implemented in a BCD process
Author :
Joita, Adrian ; Matei, Vinatoru ; Profirescu, O. ; Nedelcu, Steluta ; Bodea, Mircea ; Profirescu, M.
Author_Institution :
ROHM Semicond. Eur. Design Centre, Willich, Germany
Abstract :
The paper presents a new improved integrated charge pump based on the use of both enhanced and depletion MOS transistors as active switches and charge transfer devices in order to accommodate the voltage class requirements specific to the BCD technology. A two stage design was implemented using 2.5 MHz clock frequency to drive the charge pump capacitors.
Keywords :
MOSFET; capacitors; charge pump circuits; switches; BCD process; BCD technology; active switch improved Dickson charge pump; charge pump capacitors; charge transfer devices; depletion MOS transistors; enhanced MOS transistors; frequency 2.5 MHz; Capacitors; Charge pumps; Clocks; MOSFETs; Switches; Switching circuits; BCD; Charge pump; depletion nMOS transistors; switches;
Conference_Titel :
Semiconductor Conference (CAS), 2012 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4673-0737-6
DOI :
10.1109/SMICND.2012.6400737
