DocumentCode :
2799686
Title :
Two-phase dynamic FET logic: an extremely low power, high speed logic family for GaAs VLSI
Author :
Nary, K.R. ; Long, S.I.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fYear :
1991
fDate :
20-23 Oct. 1991
Firstpage :
83
Lastpage :
86
Abstract :
A GaAs logic family that provides extremely low power dissipation, high density, and the full spectrum of logic circuit possibilities is described. It is implemented with a standard e/d MESFET foundry process. Two-phase dynamic FET logic (TDFL) is shown to operate up to 1 GHz with an extremely low power dissipation of approximately 30 nW/MHz-gate. It is self latching, lending itself to highly efficient implementations of pipelined systems. Finally, it is directly compatible with static DCFL (direct coupled FET logic) making its introduction into high speed systems very straightforward.<>
Keywords :
VLSI; field effect integrated circuits; gallium arsenide; integrated logic circuits; 1 GHz; 30 nW; GaAs; MESFET foundry process; TDFL; VLSI; high density; high speed logic family; low power logic family; pipelined systems; self latching; two-phase dynamic FET logic; Clocks; FETs; Gallium arsenide; Inverters; Logic circuits; Logic gates; MESFETs; Ocean temperature; Power dissipation; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
Type :
conf
DOI :
10.1109/GAAS.1991.172639
Filename :
172639
Link To Document :
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