• DocumentCode
    2799703
  • Title

    Low power and highly reliable gates using arrays of optimally sized transistors

  • Author

    Beiu, Valeriu ; Iordaconiu, L. ; Beg, Azam ; Ibrahim, Wubshet ; Kharbash, Fekri

  • Author_Institution
    Fac. of Inf. Technol., United Arab Emirates Univ., Abu Dhabi, United Arab Emirates
  • Volume
    2
  • fYear
    2012
  • fDate
    15-17 Oct. 2012
  • Firstpage
    433
  • Lastpage
    436
  • Abstract
    This paper introduces an enabling transistor sizing method for classical CMOS gates in advanced technology nodes through simple examples. The well-known CMOS inverter is used here both for presenting the different sizing options as well as for simulations for weighting performances. These preliminary results show that sizing is far from exhausting its potential as still allowing to: (i) improve delay and power; (ii) increase the static noise margins (SNMs); (iii) modify threshold voltages (VTH); and also (iv) reduce VTH variations (σVTH).
  • Keywords
    CMOS integrated circuits; logic gates; low-power electronics; transistors; CMOS gates; CMOS inverter; VTH variation reduction; highly reliable gates; low power gates; static noise margins; threshold voltages; transistor arrays; transistor sizing method; CMOS integrated circuits; Integrated circuit reliability; Inverters; Logic gates; MOS devices; Transistors; CMOS; arrays; inverter; power; sizing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference (CAS), 2012 International
  • Conference_Location
    Sinaia
  • ISSN
    1545-857X
  • Print_ISBN
    978-1-4673-0737-6
  • Type

    conf

  • DOI
    10.1109/SMICND.2012.6400738
  • Filename
    6400738