Design of a 1-GHz self-resonance integrated GaAs gyrator-C inductor

Author

Wu, Pan ; Schaumann, Rolf

Author_Institution

Dept. of Electr. & Comput. Eng., Portland State Univ., OR, USA

fYear

1990

fDate

12-14 Aug 1990

Firstpage

362

Abstract

The design considerations for achieving optimal results in gyrator-C inductor performance are discussed. According to the roles the operational transconductance amplifiers (OTAs) play in a gyrator-C inductor, general rules are set for an appropriate choice of the different parameters in the OTAs used. By applying these rules, the OTA circuitry is simplified and a gyrator-C inductor with 1 GHz self-resonance frequency, high self-resonance quality factor, higher inductor-Q, and very low parasitic parameters is designed by using 1 μm GaAs depletion-mode MESFETs. As an application of this inductor, a simulated RLC bandpass filter is realized for obtaining 930 MHz center frequency with a tuning range of 20%

Keywords

III-V semiconductors; Q-factor; active networks; circuit resonance; field effect integrated circuits; gallium arsenide; inductors; linear integrated circuits; operational amplifiers; 1 GHz; 1 micron; 930 MHz; GaAs; OTA circuitry; depletion-mode MESFETs; gyrator-C inductor; operational transconductance amplifiers; self-resonance frequency; self-resonance quality factor; simulated RLC bandpass filter; Circuit simulation; Frequency; Gallium arsenide; Inductors; MESFETs; Operational amplifiers; Q factor; RLC circuits; Transconductance; VHF circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1990., Proceedings of the 33rd Midwest Symposium on

Conference_Location

Calgary, Alta.

Print_ISBN

0-7803-0081-5

Type

conf

DOI

10.1109/MWSCAS.1990.140728

Filename

140728