Title :
U-band 200 mW pseudomorphic InGaAs power HEMT
Author :
Arai, S. ; Kojima, H. ; Otsuka, K. ; Kawano, M. ; Ishimura, H. ; Tokuda, H.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
A U-band pseudomorphic InGaAs power HEMT (high electron mobility transistor) has been developed. The device has two 400 mu m gate-width unit cells connected in parallel with monolithically integrated Wilkinson-type microstrip power divider and combiner. A state-of-the-art output power of 23.4 dBm (219 mW) is obtained at 55 GHz with 4.1 dB gain and 18% power-added-efficiency.<>
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; power transistors; solid-state microwave devices; 18 percent; 200 to 219 mW; 4.1 dB; 400 micron; 55 GHz; U-band; Wilkinson-type; high electron mobility transistor; microstrip power combiner; microstrip power divider; power HEMT; pseudomorphic InGaAs; Electron mobility; Frequency; Gain; Gallium arsenide; Gold; HEMTs; Indium gallium arsenide; Microstrip; Millimeter wave transistors; Power generation;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172645
