Title :
Single layer tilting actuator with multiple close-gap electrodes
Author :
Shmilovich, T. ; Krylov, S.
Author_Institution :
Tel Aviv Univ., Tel Aviv
Abstract :
We report on the novel architecture and operational principle of a tilting electrostatic actuator fabricated using single structural layer. The actuator is fabricated using silicon on insulator (SOI) technology and incorporates comb-like high aspect ratio electrodes oriented in the direction parallel to the rotation axis of the tilting element. Tilting motion is accompanied by the decrease of the distance between the electrodes, resulting in the non-uniform distribution of electrostatic pressure and appearance of the actuation torque. A feasibility study is performed using a reduced order model of the electrostatically actuated device and verified by a coupled three-dimensional simulation. Experimental results suggest that this architecture can be efficiently used for static and resonant operation of electrostatic devices where the tilting motion is desirable.
Keywords :
electrostatic actuators; electrostatics; silicon-on-insulator; actuation torque; aspect ratio; coupled three-dimensional simulation; electrodes; electrostatic pressure nonuniform distribution; reduced order model; silicon on insulator; single structural layer; tilting electrostatic actuator; Electrodes; Electronic mail; Electrostatic actuators; Fabrication; Mechanical engineering; Numerical analysis; Resonance; Silicon on insulator technology; Solids; Torque;
Conference_Titel :
Micro Electro Mechanical Systems, 2007. MEMS. IEEE 20th International Conference on
Conference_Location :
Hyogo
Print_ISBN :
978-1-4244-095-5
Electronic_ISBN :
1084-6999
DOI :
10.1109/MEMSYS.2007.4433125