DocumentCode
2799799
Title
Single layer tilting actuator with multiple close-gap electrodes
Author
Shmilovich, T. ; Krylov, S.
Author_Institution
Tel Aviv Univ., Tel Aviv
fYear
2007
fDate
21-25 Jan. 2007
Firstpage
675
Lastpage
678
Abstract
We report on the novel architecture and operational principle of a tilting electrostatic actuator fabricated using single structural layer. The actuator is fabricated using silicon on insulator (SOI) technology and incorporates comb-like high aspect ratio electrodes oriented in the direction parallel to the rotation axis of the tilting element. Tilting motion is accompanied by the decrease of the distance between the electrodes, resulting in the non-uniform distribution of electrostatic pressure and appearance of the actuation torque. A feasibility study is performed using a reduced order model of the electrostatically actuated device and verified by a coupled three-dimensional simulation. Experimental results suggest that this architecture can be efficiently used for static and resonant operation of electrostatic devices where the tilting motion is desirable.
Keywords
electrostatic actuators; electrostatics; silicon-on-insulator; actuation torque; aspect ratio; coupled three-dimensional simulation; electrodes; electrostatic pressure nonuniform distribution; reduced order model; silicon on insulator; single structural layer; tilting electrostatic actuator; Electrodes; Electronic mail; Electrostatic actuators; Fabrication; Mechanical engineering; Numerical analysis; Resonance; Silicon on insulator technology; Solids; Torque;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2007. MEMS. IEEE 20th International Conference on
Conference_Location
Hyogo
ISSN
1084-6999
Print_ISBN
978-1-4244-095-5
Electronic_ISBN
1084-6999
Type
conf
DOI
10.1109/MEMSYS.2007.4433125
Filename
4433125
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